mmbt3904 300mw, npn small signal transistor small signal transistor ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max ? case : sot- 23 small outline plastic package 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.043 package packing marking sot-23 3k / 7" reel 1am sot-23 3k / 7" reel 1am maximum ratings notes:1. valid provided that electrodes are kept at ambient temperature units c 200 -55 to + 150 ma ordering information part no. mmbt3904 rf mmbt3904 rfg junction and storage temperature range t j , t stg emitter-base voltage v ebo collector current i c 0.022 ref 0.550 ref ? high temperature soldering guaranteed: 260 c/10s f mw features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code a d e g rating at 25 c ambient temperature unless otherwise specified. ? marking code : 1am b power dissipation p d value suggested pad layout v v v 40 60 unit (mm) ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed 5 300 collector-base voltage collector-emitter voltage v cbo v ceo unit (inch) dimensions sot-23 type number symbol ? epitaxial planar die construction ? weight : 0.008gram (approximately) maximum ratings and electrical characteristics c b a c d f e g 2 emitter 3 collector 1 base 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 version : b10
mmbt3904 300mw, npn small signal transistor small signal transistor electrical characteristics units collector-base breakdown voltage i e = 0 v i b = 0 v i c = 0 v i e = 0 a na i c = 0 a i c = 10ma i c = 50ma i c = 100ma collector-emitter saturation voltage i b = 5ma v base-emitter saturation voltage i b = 5ma v v ce = 20v f= 100mhz mhz v cc =3v v be =0.5v i c =10ma i b1 =1.0ma ns v cc =3v v be =0.5v i c =10ma i b1 =1.0ma ns v cc =3v i c =10ma i b1 =i b2 =1.0ma ns v cc =3v i c =10ma i b1 =i b2 =1.0ma ns tape & reel specification carrier width carrier length carrier depth sprocket hole reel outside diameter reel inner diameter feed hole width sprocke hole position punch hole position sprocke hole pitch embossment center overall tape thickness tape width reel width 178 1 d d 200 c 50 1.50 0.10 v be(sat) 0.3 0.95 55 min t r item symbol dimension(mm) a b min max 0.1 type number i c = 10a i c = 1ma i e = 10a v cb = 60v 60 40 v ce = 1v 50 30 - 400 v eb = 5v v ce = 1v 60 - - - - 6 0.1 delay time rise time 250 f t t d - -3 5 -3 5 i c = 50ma i c = 50ma i c = 10ma transition frequency w1 3.15 0.10 2.77 0.10 1.22 0.10 13.0 0.20 1.75 0.10 3.50 0.05 4.00 0.10 p0 p1 emitter cut-offcurrent t d1 d2 e f dc current gain - - - v (br)cbo i ebo v ce(sat) i cbo v (br)ceo v (br)ebo symbol - h fe collector cut-off current v ce = 30v v be (off)= 3v 12.30 0.20 collector-emitter breakdown voltage 2.00 0.05 emitter-base breakdown voltage 0.229 0.013 8.10 0.20 w collector cut-off current i ceo - v ce = 1v 100 fall time t f - storage time t s - top cover tape carieer ta pe any additional label (if required ) tsc label w1 d1 d2 d t c d p1 p0 a b f w e direction of feed version : b10
mmbt3904 300mw, npn small signal transistor small signal transistor rating and characteristic curves version : b10 base-emitter on voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(on) c v = 5v ce 25 c 125 c - 40 c base-emitter saturation voltage vs collector current 0.1 1 10 100 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltage (v) besat c = 10 25 c 125 c - 40 c collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.05 0.1 0.15 i - collector current (ma) v - collector-emitter voltage (v) cesat 25 c c = 10 125 c - 40 c collector-cutoff current vs ambient temperature 25 50 75 100 125 150 0.1 1 10 100 500 t - ambient temperature ( c) i - collector current (na) a v = 30v cb cbo capacitance vs reverse bias voltage 0.1 1 10 100 1 2 3 4 5 10 reverse bias voltage (v) capacitance (pf) c obo c ibo f = 1.0 mhz typical pulsed current gain vs collector current 0. 1 1 10 1 00 0 100 200 300 400 500 i - collector current (ma) h - typ ical pulsed current gain fe - 40 c 25 c c v = 5v ce 125 c
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